Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK3566(STA4,Q,M)
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3,977
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Toshiba Semiconductor and Storage MOSFET N-CH 900V 2.5A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 900V 2.5A (Ta) 6.4 Ohm @ 1.5A, 10V 4V @ 1mA 12nC @ 10V 470pF @ 25V 10V ±30V
FQPF8P10
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1,223
In-stock
ON Semiconductor MOSFET P-CH 100V 5.3A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 28W (Tc) P-Channel - 100V 5.3A (Tc) 530 mOhm @ 2.65A, 10V 4V @ 250µA 15nC @ 10V 470pF @ 25V 10V ±30V
SPA04N50C3XKSA1
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RFQ
3,486
In-stock
Infineon Technologies MOSFET N-CH 560V 4.5A TO220FP CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 31W (Tc) N-Channel - 560V 4.5A (Tc) 950 mOhm @ 2.8A, 10V 3.9V @ 200µA 22nC @ 10V 470pF @ 25V 10V ±20V
R6007KNX
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RFQ
2,872
In-stock
Rohm Semiconductor MOSFET N-CH 600V 7A TO220FM - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 46W (Tc) N-Channel Schottky Diode (Isolated) 600V 7A (Tc) 620 mOhm @ 2.4A, 10V 5V @ 1mA 14.5nC @ 10V 470pF @ 25V 10V ±20V