Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK3566(STA4,Q,M)
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Toshiba Semiconductor and Storage MOSFET N-CH 900V 2.5A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel - 900V 2.5A (Ta) 6.4 Ohm @ 1.5A, 10V 4V @ 1mA 12nC @ 10V 470pF @ 25V 10V ±30V
DMN95H8D5HCTI
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2,345
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Diodes Incorporated MOSFET N-CHANNEL 950V ITO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB 30W (Tc) N-Channel - 950V - 7 Ohm @ 1A, 10V 5V @ 250µA 7.9nC @ 10V 470pF @ 25V 10V ±30V
DMN95H8D5HCT
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1,923
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Diodes Incorporated MOSFET N-CH 950V 2.5A TO220AB - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 950V 2.5A (Tc) 7 Ohm @ 1A, 10V 5V @ 250µA 7.9nC @ 10V 470pF @ 25V 10V ±30V
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2,124
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Diodes Incorporated MOSFET N-CH 900V 2.5A TO220AB - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 900V 2.5A (Tc) 7 Ohm @ 1A, 10V 5V @ 250µA 7.9nC @ 10V 470pF @ 25V 10V ±30V
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1,395
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Diodes Incorporated MOSFET N-CH 900V 2.5A ITO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab ITO-220AB 30W (Tc) N-Channel - 900V 2.5A (Tc) 7 Ohm @ 1A, 10V 5V @ 250µA 7.9nC @ 10V 470pF @ 25V 10V ±30V
R6007KNJTL
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3,973
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Rohm Semiconductor MOSFET N-CHANNEL 600V 7A TO263 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 78W (Tc) N-Channel Schottky Diode (Isolated) 600V 7A (Tc) 620 mOhm @ 2.4A, 10V 5V @ 1mA 14.5nC @ 10V 470pF @ 25V 10V ±20V
R6007KNJTL
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907
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Rohm Semiconductor MOSFET N-CHANNEL 600V 7A TO263 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 78W (Tc) N-Channel Schottky Diode (Isolated) 600V 7A (Tc) 620 mOhm @ 2.4A, 10V 5V @ 1mA 14.5nC @ 10V 470pF @ 25V 10V ±20V
R6007KNJTL
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2,770
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Rohm Semiconductor MOSFET N-CHANNEL 600V 7A TO263 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 78W (Tc) N-Channel Schottky Diode (Isolated) 600V 7A (Tc) 620 mOhm @ 2.4A, 10V 5V @ 1mA 14.5nC @ 10V 470pF @ 25V 10V ±20V
R6007KNX
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2,872
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Rohm Semiconductor MOSFET N-CH 600V 7A TO220FM - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 46W (Tc) N-Channel Schottky Diode (Isolated) 600V 7A (Tc) 620 mOhm @ 2.4A, 10V 5V @ 1mA 14.5nC @ 10V 470pF @ 25V 10V ±20V