- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,351
In-stock
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Infineon Technologies | MOSFET P-CH 30V 6.7A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,912
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 18A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 88W (Tc) | P-Channel | - | 60V | 18A (Tc) | 140 mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | 1100pF @ 25V | 10V | ±20V | |||
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VIEW |
2,905
In-stock
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ON Semiconductor | T6 40V DPAK EXPANSION AND | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 3W (Ta), 30W (Tc) | N-Channel | - | 40V | 14A (Ta), 45A (Tc) | 7.7 mOhm @ 15A, 10V | 2.2V @ 30µA | 20nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,515
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 18A D2PAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.7W (Ta), 88W (Tc) | P-Channel | - | 60V | 18A (Tc) | 140 mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | 1100pF @ 25V | 10V | ±20V | |||
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VIEW |
1,206
In-stock
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Rohm Semiconductor | NCH 190V 7.5A POWER MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 52W (Tc) | N-Channel | - | 190V | 7.5A (Tc) | 336 mOhm @ 3.8A, 10V | 2.5V @ 1mA | 30nC @ 10V | 1100pF @ 25V | 4V, 10V | ±20V | |||
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VIEW |
2,235
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 26A POWERPAKSO | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 45W (Tc) | N-Channel | - | 100V | 26A (Tc) | 30 mOhm @ 10A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
812
In-stock
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Infineon Technologies | MOSFET P-CH 30V 5.8A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 5.8A (Ta) | 45 mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,844
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 23A POWERPAKSO-8 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 45W (Tc) | N-Channel | - | 60V | 23A (Tc) | 33 mOhm @ 7A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1100pF @ 25V | 4.5V, 10V | ±20V |