Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN004-60P,127
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715
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NXP USA Inc. MOSFET N-CH 60V 75A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB - N-Channel 60V 75A (Tc) 3.6 mOhm @ 25A, 10V 4V @ 1mA 168nC @ 10V 8300pF @ 25V - -
IXTX17N120L
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RFQ
3,193
In-stock
IXYS MOSFET N-CH 1200V 17A PLUS247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PLUS247™-3 700W (Tc) N-Channel 1200V 17A (Tc) 900 mOhm @ 8.5A, 20V 5V @ 250µA 155nC @ 15V 8300pF @ 25V 20V ±30V
IXTK17N120L
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RFQ
1,196
In-stock
IXYS MOSFET N-CH 1200V 17A TO-264 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 700W (Tc) N-Channel 1200V 17A (Tc) 900 mOhm @ 8.5A, 20V 5V @ 250µA 155nC @ 15V 8300pF @ 25V 20V ±30V
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RFQ
1,975
In-stock
IXYS MOSFET N-CH HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 890W (Tc) N-Channel 650V 80A (Tc) 38 mOhm @ 500mA, 10V 5V @ 4mA 140nC @ 10V 8300pF @ 25V 10V ±30V