Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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HUFA75823D3S
RFQ
VIEW
RFQ
837
In-stock
ON Semiconductor MOSFET N-CH 150V 14A TO-252AA UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 85W (Tc) N-Channel - 150V 14A (Tc) 150 mOhm @ 14A, 10V 4V @ 250µA 54nC @ 20V 800pF @ 25V 10V ±20V
IXTY8N65X2
RFQ
VIEW
RFQ
1,036
In-stock
IXYS MOSFET N-CH 650V 8A X2 TO-252 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 150W (Tc) N-Channel - 650V 8A (Tc) 500 mOhm @ 4A, 10V 5V @ 250µA 12nC @ 10V 800pF @ 25V 10V ±30V
AUIRLR3410
RFQ
VIEW
RFQ
991
In-stock
Infineon Technologies MOSFET N-CH 100V 17A DPAK HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 100V 17A (Tc) 105 mOhm @ 10A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
IRLR3410CPBF
RFQ
VIEW
RFQ
2,272
In-stock
Infineon Technologies MOSFET N-CH 100V 17A DPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak - N-Channel - 100V 17A (Tc) 105 mOhm @ 10A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V - -
IRLR3410PBF
RFQ
VIEW
RFQ
3,418
In-stock
Infineon Technologies MOSFET N-CH 100V 17A DPAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 100V 17A (Tc) 105 mOhm @ 10A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V