Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF7413ATR
RFQ
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RFQ
2,007
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Infineon Technologies MOSFET N-CH 30V 12A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 12A (Ta) 13.5 mOhm @ 6.6A, 10V 1V @ 250µA 79nC @ 10V 1800pF @ 25V 4.5V, 10V ±20V
IRF7413A
RFQ
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RFQ
2,202
In-stock
Infineon Technologies MOSFET N-CH 30V 12A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel - 30V 12A (Ta) 13.5 mOhm @ 6.6A, 10V 1V @ 250µA 79nC @ 10V 1800pF @ 25V 4.5V, 10V ±20V
TK12A60D(STA4,Q,M)
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RFQ
2,396
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 12A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 600V 12A (Ta) 550 mOhm @ 6A, 10V 4V @ 1mA 38nC @ 10V 1800pF @ 25V 10V ±30V