Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT31N80JC3
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RFQ
2,146
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Microsemi Corporation MOSFET N-CH 800V 31A SOT-227 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 833W (Tc) N-Channel - 800V 31A (Tc) 145 mOhm @ 22A, 10V 3.9V @ 2mA 355nC @ 10V 4510pF @ 25V 10V ±20V
APT34N80LC3G
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RFQ
2,725
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Microsemi Corporation MOSFET N-CH 800V 34A TO-264 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 [L] 417W (Tc) N-Channel - 800V 34A (Tc) 145 mOhm @ 22A, 10V 3.9V @ 2mA 355nC @ 10V 4510pF @ 25V 10V ±20V
IXKR25N80C
RFQ
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RFQ
1,249
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IXYS MOSFET N-CH 800V 25A ISOPLUS247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ - N-Channel Super Junction 800V 25A (Tc) 150 mOhm @ 18A, 10V 4V @ 2mA 355nC @ 10V - 10V ±20V
APT34N80B2C3G
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RFQ
2,894
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Microsemi Corporation MOSFET N-CH 800V 34A T-MAX - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 417W (Tc) N-Channel - 800V 34A (Tc) 145 mOhm @ 22A, 10V 3.9V @ 2mA 355nC @ 10V 4510pF @ 25V 10V ±20V
IXFN150N65X2
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RFQ
1,979
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IXYS MOSFET N-CH 650V 145A SOT-227 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 1040W (Tc) N-Channel - 650V 145A (Tc) 17 mOhm @ 75A, 10V 5V @ 8mA 355nC @ 10V 21000pF @ 25V 10V ±30V