- Manufacture :
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- Part Status :
- Operating Temperature :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,083
In-stock
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NXP USA Inc. | MOSFET N-CH 30V 62A LFPAK | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 56W (Tc) | N-Channel | - | 30V | 62A (Tc) | 8.3 mOhm @ 15A, 10V | 2.15V @ 1mA | 18.3nC @ 10V | 1005pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,776
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,768
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10.5A DPAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-TO252-3 | 50W (Tc) | N-Channel | - | 100V | 10.5A (Tc) | 170 mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
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VIEW |
2,366
In-stock
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Infineon Technologies | MOSFET N-CH 25V 18A 8SON | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.1W (Ta), 30W (Tc) | N-Channel | - | 25V | 18A (Ta), 40A (Tc) | 3.3 mOhm @ 20A, 10V | 2V @ 250µA | 18.3nC @ 10V | 1230pF @ 12V | 4.5V, 10V | ±16V | |||
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|
VIEW |
1,686
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT-223 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
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VIEW |
3,565
In-stock
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Infineon Technologies | MOSFET N-CH 25V 19A 8SON | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.1W (Ta), 30W (Tc) | N-Channel | - | 25V | 19A (Ta), 40A (Tc) | 3.1 mOhm @ 20A, 10V | 2V @ 250µA | 18.3nC @ 10V | 1230pF @ 12V | 4.5V, 10V | ±16V | |||
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VIEW |
2,953
In-stock
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ON Semiconductor | MOSFET N-CH 30V 6.8A 8-SOIC | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 780mW (Ta) | N-Channel | - | 30V | 6.8A (Ta) | 10 mOhm @ 9A, 10V | 3V @ 250µA | 18.3nC @ 10V | 1060pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,342
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | |||
