Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor MOSFET N-CH 30V 156A TO-220AB PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 30V 19A (Ta), 156A (Tc) 4.1 mOhm @ 35A, 10V 2.5V @ 250µA 132nC @ 10V 5200pF @ 15V 4.5V, 10V ±20V
FDP8870-F085
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2,309
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ON Semiconductor MOSFET N-CH 30V 156A TO-220 PowerTrench® Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 30V 19A (Ta), 156A (Tc) 4.1 mOhm @ 35A, 10V 2.5V @ 250µA 132nC @ 10V 5200pF @ 15V 4.5V, 10V ±20V
SIHP35N60E-GE3
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3,896
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Vishay Siliconix MOSFET N-CH 600V 32A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 600V 32A (Tc) 94 mOhm @ 17A, 10V 4V @ 250µA 132nC @ 10V 2760pF @ 100V 10V ±30V
IXTP160N10T
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2,070
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IXYS MOSFET N-CH 100V 160A TO-220 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 430W (Tc) N-Channel - 100V 160A (Tc) 7 mOhm @ 25A, 10V 4.5V @ 250µA 132nC @ 10V 6600pF @ 25V 10V ±30V