- Manufacture :
- Series :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,859
In-stock
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ON Semiconductor | MOSFET P-CH 30V 1.3A SSOT-3 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 500mW (Ta) | P-Channel | 30V | 1.3A (Ta) | 180 mOhm @ 1.3A, 10V | 2.5V @ 250µA | 1.9nC @ 4.5V | 150pF @ 15V | 4.5V, 10V | ±25V | |||
|
VIEW |
1,734
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 1A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | 3-DFN1006B (0.6x1) | 360mW (Ta), 3.125W (Tc) | P-Channel | 20V | 1A (Ta) | 450 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.9nC @ 4.5V | 127pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
3,863
In-stock
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Nexperia USA Inc. | MOSFET P-CH 20V 1A XQFN3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | DFN1006-3 | 360mW (Ta), 3.125W (Tc) | P-Channel | 20V | 1A (Ta) | 450 mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.9nC @ 4.5V | 127pF @ 10V | 1.8V, 4.5V | ±8V | |||
