Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK764R3-40B,118
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3,395
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NXP USA Inc. MOSFET N-CH 40V 75A D2PAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 254W (Tc) N-Channel - 40V 75A (Tc) 4.3 mOhm @ 25A, 10V 4V @ 1mA 69nC @ 10V 4824pF @ 25V 10V ±20V
IRF1018ESTRLPBF
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3,337
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Infineon Technologies MOSFET N-CH 60V 79A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 110W (Tc) N-Channel - 60V 79A (Tc) 8.4 mOhm @ 47A, 10V 4V @ 100µA 69nC @ 10V 2290pF @ 50V 10V ±20V
IPB054N08N3GATMA1
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3,983
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Infineon Technologies MOSFET N-CH 80V 80A TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 150W (Tc) N-Channel - 80V 80A (Tc) 5.4 mOhm @ 80A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 6V, 10V ±20V
FDB150N10
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3,492
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ON Semiconductor MOSFET N-CH 100V 57A D2PAK PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK 110W (Tc) N-Channel - 100V 57A (Tc) 15 mOhm @ 49A, 10V 4.5V @ 250µA 69nC @ 10V 4760pF @ 25V 10V ±20V