Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPI15N60CFDHKSA1
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2,395
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Infineon Technologies MOSFET N-CH 650V 13.4A TO-262 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 156W (Tc) N-Channel - 650V 13.4A (Tc) 330 mOhm @ 9.4A, 10V 5V @ 750µA 84nC @ 10V 1820pF @ 25V 10V ±20V
STB25NM60N-1
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1,099
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STMicroelectronics MOSFET N-CH 600V 21A I2PAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 160W (Tc) N-Channel - 600V 21A (Tc) 160 mOhm @ 10.5A, 10V 4V @ 250µA 84nC @ 10V 2400pF @ 50V 10V ±25V
STB25NM50N-1
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3,124
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STMicroelectronics MOSFET N-CH 500V 22A I2PAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 160W (Tc) N-Channel - 500V 22A (Tc) 140 mOhm @ 11A, 10V 4V @ 250µA 84nC @ 10V 2565pF @ 25V 10V ±25V
IRFSL3607PBF
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RFQ
1,216
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Infineon Technologies MOSFET N-CH 75V 80A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 140W (Tc) N-Channel - 75V 80A (Tc) 9 mOhm @ 46A, 10V 4V @ 100µA 84nC @ 10V 3070pF @ 50V 10V ±20V