Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTJ6N150
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2,632
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IXYS MOSFET N-CH 1500V 3A ISOTO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 125W (Tc) N-Channel - 1500V 3A (Tc) 3.85 Ohm @ 3A, 10V 5V @ 250µA 67nC @ 10V 2230pF @ 25V 10V ±30V
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3,008
In-stock
Vishay Siliconix MOSFET N-CH 500V 8A TO-220-5 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-5 TO-220-5 125W (Tc) N-Channel Current Sensing 500V 8A (Tc) 850 mOhm @ 4.8A, 10V 4V @ 250µA 67nC @ 10V 1300pF @ 25V 10V ±20V
TSM024NA04LCR RLG
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3,901
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 40V 170A 8PDFN - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 125W (Tc) N-Channel - 40V 170A (Tc) 2.4 mOhm @ 25A, 10V 2.5V @ 250µA 67nC @ 10V 4224pF @ 20V 4.5V, 10V ±20V
TSM024NA04LCR RLG
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RFQ
2,895
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Taiwan Semiconductor Corporation MOSFET N-CH 40V 170A 8PDFN - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 125W (Tc) N-Channel - 40V 170A (Tc) 2.4 mOhm @ 25A, 10V 2.5V @ 250µA 67nC @ 10V 4224pF @ 20V 4.5V, 10V ±20V
TSM024NA04LCR RLG
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RFQ
929
In-stock
Taiwan Semiconductor Corporation MOSFET N-CH 40V 170A 8PDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PDFN (5x6) 125W (Tc) N-Channel - 40V 170A (Tc) 2.4 mOhm @ 25A, 10V 2.5V @ 250µA 67nC @ 10V 4224pF @ 20V 4.5V, 10V ±20V