Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STP33N60DM2
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2,481
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STMicroelectronics MOSFET N-CH 600V 24A MDmesh™ DM2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 190W (Tc) N-Channel - 600V 24A (Tc) 130 mOhm @ 12A, 10V 5V @ 250µA 43nC @ 10V 1870pF @ 100V 10V ±25V
TSM60NB150CF C0G
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3,297
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Taiwan Semiconductor Corporation MOSFET N-CH 600V 24A ITO220S - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack ITO-220S 62.5W (Tc) N-Channel - 600V 24A (Tc) 150 mOhm @ 4.3A, 10V 4V @ 250µA 43nC @ 10V 1765pF @ 100V 10V ±30V
STW33N60DM2
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1,993
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STMicroelectronics MOSFET N-CH 600V 24A MDmesh™ DM2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 190W (Tc) N-Channel - 600V 24A (Tc) 130 mOhm @ 12A, 10V 5V @ 250µA 43nC @ 10V 1870pF @ 100V 10V ±25V