Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPW60R280E6FKSA1
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1,610
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Infineon Technologies MOSFET N-CH 600V 13.8A TO247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 104W (Tc) N-Channel - 600V 13.8A (Tc) 280 mOhm @ 6.5A, 10V 3.5V @ 430µA 43nC @ 10V 950pF @ 100V 10V ±20V
IPW60R199CPFKSA1
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1,804
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Infineon Technologies MOSFET N-CH 600V 16A TO-247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 139W (Tc) N-Channel - 600V 16A (Tc) 199 mOhm @ 9.9A, 10V 3.5V @ 660µA 43nC @ 10V 1520pF @ 100V 10V ±20V
IPW60R280C6FKSA1
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2,089
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Infineon Technologies MOSFET N-CH 600V 13.8A TO247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 104W (Tc) N-Channel - 600V 13.8A (Tc) 280 mOhm @ 6.5A, 10V 3.5V @ 430µA 43nC @ 10V 950pF @ 100V 10V ±20V
STW33N60DM2
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1,993
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STMicroelectronics MOSFET N-CH 600V 24A MDmesh™ DM2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 190W (Tc) N-Channel - 600V 24A (Tc) 130 mOhm @ 12A, 10V 5V @ 250µA 43nC @ 10V 1870pF @ 100V 10V ±25V