- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,075
In-stock
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Global Power Technologies Group | MOSFET N-CH 400V 2A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 30W (Tc) | N-Channel | - | 400V | 2A (Tc) | 3.4 Ohm @ 1A, 10V | 4V @ 250µA | 3.7nC @ 10V | 210pF @ 25V | 10V | ±30V | ||||
VIEW |
2,258
In-stock
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Renesas Electronics America | MOSFET N-CH 600V 0.1A TO92 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92(1) | 900mW (Ta) | N-Channel | - | 600V | 100mA (Ta) | 52 Ohm @ 50mA, 10V | - | 3.7nC @ 10V | 25pF @ 25V | 10V | ±30V | ||||
VIEW |
800
In-stock
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STMicroelectronics | MOSFET N-CH 800V 3A TO220FP | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 20W (Tc) | N-Channel | - | 800V | 3A (Tc) | 2.6 Ohm @ 1A, 10V | 5V @ 100µA | 3.7nC @ 10V | 122pF @ 100V | 10V | ±30V | ||||
VIEW |
2,868
In-stock
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STMicroelectronics | MOSFET N-CHANNEL 800V 3A TO220 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | - | 800V | 3A (Tc) | 2.6 Ohm @ 1A, 10V | 5V @ 100µA | 3.7nC @ 10V | 122pF @ 100V | 10V | ±30V |