Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP80N04S303AKSA1
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3,748
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Infineon Technologies MOSFET N-CH 40V 80A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 188W (Tc) N-Channel - 40V 80A (Tc) 3.5 mOhm @ 80A, 10V 4V @ 120µA 110nC @ 10V 7300pF @ 25V 10V ±20V
2SK3431-Z-E1-AZ
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3,796
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Renesas Electronics America MOSFET N-CH 40V 83A TO220AB - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 1.5W (Ta), 100W (Tc) N-Channel - 40V 83A (Tc) 5.6 mOhm @ 42A, 10V - 110nC @ 10V 6100pF @ 10V 4V, 10V ±20V
2SK3431-AZ
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RFQ
1,226
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Renesas Electronics America MOSFET N-CH 40V 83A TO220AB - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 1.5W (Ta), 100W (Tc) N-Channel - 40V 83A (Tc) 5.6 mOhm @ 42A, 10V - 110nC @ 10V 6100pF @ 10V 4V, 10V ±20V
IRF7240PBF
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1,269
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Infineon Technologies MOSFET P-CH 40V 10.5A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 40V 10.5A (Ta) 15 mOhm @ 10.5A, 10V 3V @ 250µA 110nC @ 10V 9250pF @ 25V 4.5V, 10V ±20V
IPI80N04S303AKSA1
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RFQ
894
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Infineon Technologies MOSFET N-CH 40V 80A TO262-3 OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 188W (Tc) N-Channel - 40V 80A (Tc) 3.5 mOhm @ 80A, 10V 4V @ 120µA 110nC @ 10V 7300pF @ 25V 10V ±20V