- Series :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,592
In-stock
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ON Semiconductor | MOSFET N-CH 200V 28A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 156W (Tc) | N-Channel | - | 200V | 28A (Tc) | 82 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 2220pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,389
In-stock
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ON Semiconductor | MOSFET N-CH 200V 28A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 156W (Tc) | N-Channel | - | 200V | 28A (Tc) | 82 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 2200pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,167
In-stock
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IXYS | MOSFET N-CH 200V 48A TO-247 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 (IXTH) | 275W (Tc) | N-Channel | - | 200V | 48A (Tc) | 50 mOhm @ 15A, 10V | 4V @ 250µA | 110nC @ 10V | 3000pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,801
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,913
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 31A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,741
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 31A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,580
In-stock
|
ON Semiconductor | MOSFET N-CH 200V 32A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 204W (Tc) | N-Channel | - | 200V | 32A (Tc) | 82 mOhm @ 16A, 10V | 4V @ 250µA | 110nC @ 10V | 2220pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,046
In-stock
|
ON Semiconductor | MOSFET N-CH 200V 28A TO-220F | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 50W (Tc) | N-Channel | - | 200V | 28A (Tc) | 82 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 2220pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,856
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 26A TO-220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 46W (Tc) | N-Channel | - | 200V | 26A (Tc) | 25 mOhm @ 17A, 10V | 5V @ 250µA | 110nC @ 10V | 4600pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,777
In-stock
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ON Semiconductor | MOSFET N-CH 200V 28A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 156W (Tc) | N-Channel | - | 200V | 28A (Tc) | 82 mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | 2200pF @ 25V | 10V | ±30V | |||
