- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,517
In-stock
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Microsemi Corporation | MOSFET N-CH 600V 23A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 415W (Tc) | N-Channel | - | 600V | 24A (Tc) | 290 mOhm @ 11A, 10V | 5V @ 1mA | 110nC @ 10V | 4415pF @ 25V | 10V | ±30V | |||
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VIEW |
963
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 39A TO220-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | - | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
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VIEW |
3,185
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A TO-3P | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 270W (Tc) | N-Channel | Super Junction | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
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VIEW |
3,785
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 8.9A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 170W (Tc) | N-Channel | - | 600V | 8.9A (Tc) | 820 mOhm @ 5.3A, 10V | 4V @ 250µA | 110nC @ 10V | 1800pF @ 25V | 10V | ±20V | |||
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VIEW |
3,082
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 35A TO3PF | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF | 120W (Tc) | N-Channel | - | 600V | 35A (Tc) | 102 mOhm @ 18.1A, 10V | 4V @ 1mA | 110nC @ 10V | 2720pF @ 25V | 10V | ±20V | |||
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VIEW |
1,327
In-stock
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Rohm Semiconductor | MOSFET N-CH 600V 35A TO247 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 120W (Tc) | N-Channel | - | 600V | 35A (Tc) | 102 mOhm @ 18.1A, 10V | 4V @ 1mA | 110nC @ 10V | 2720pF @ 25V | 10V | ±20V | |||
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VIEW |
2,488
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 38.8A TO247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 270W (Tc) | N-Channel | Super Junction | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
