Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFB3307ZGPBF
RFQ
VIEW
RFQ
3,458
In-stock
Infineon Technologies MOSFET N-CH 75V 120A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 75V 120A (Tc) 5.8 mOhm @ 75A, 10V 4V @ 150µA 110nC @ 10V 4750pF @ 50V 10V ±20V
IRFSL3307ZPBF
RFQ
VIEW
RFQ
1,707
In-stock
Infineon Technologies MOSFET N-CH 75V 120A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 230W (Tc) N-Channel - 75V 120A (Tc) 5.8 mOhm @ 75A, 10V 4V @ 150µA 110nC @ 10V 4750pF @ 50V 10V ±20V
IRF2807ZL
RFQ
VIEW
RFQ
1,814
In-stock
Infineon Technologies MOSFET N-CH 75V 75A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 170W (Tc) N-Channel - 75V 75A (Tc) 9.4 mOhm @ 53A, 10V 4V @ 250µA 110nC @ 10V 3270pF @ 25V 10V ±20V
IRF2807Z
RFQ
VIEW
RFQ
1,120
In-stock
Infineon Technologies MOSFET N-CH 75V 75A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel - 75V 75A (Tc) 9.4 mOhm @ 53A, 10V 4V @ 250µA 110nC @ 10V 3270pF @ 25V 10V ±20V
IRFB3407ZPBF
RFQ
VIEW
RFQ
3,749
In-stock
Infineon Technologies MOSFET N-CH 75V 120A TO-220 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 75V 120A (Tc) 6.4 mOhm @ 75A, 10V 4V @ 150µA 110nC @ 10V 4750pF @ 50V 10V ±20V
IRF2807ZLPBF
RFQ
VIEW
RFQ
706
In-stock
Infineon Technologies MOSFET N-CH 75V 75A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 170W (Tc) N-Channel - 75V 75A (Tc) 9.4 mOhm @ 53A, 10V 4V @ 250µA 110nC @ 10V 3270pF @ 25V 10V ±20V
IRFU2407
RFQ
VIEW
RFQ
1,150
In-stock
Infineon Technologies MOSFET N-CH 75V 42A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel - 75V 42A (Tc) 26 mOhm @ 25A, 10V 4V @ 250µA 110nC @ 10V 2400pF @ 25V 10V ±20V
IRFB3307ZPBF
RFQ
VIEW
RFQ
3,830
In-stock
Infineon Technologies MOSFET N-CH 75V 120A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 230W (Tc) N-Channel - 75V 120A (Tc) 5.8 mOhm @ 75A, 10V 4V @ 150µA 110nC @ 10V 4750pF @ 50V 10V ±20V
IRF2807ZPBF
RFQ
VIEW
RFQ
1,398
In-stock
Infineon Technologies MOSFET N-CH 75V 75A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel - 75V 75A (Tc) 9.4 mOhm @ 53A, 10V 4V @ 250µA 110nC @ 10V 3270pF @ 25V 10V ±20V