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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFI4228PBF	RFQ VIEW	PDF RFQ	744 In-stock	Infineon Technologies	MOSFET N-CH 150V 34A TO-220AB FP		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak	46W (Tc)	N-Channel	-	150V	34A (Tc)	16 mOhm @ 20A, 10V	5V @ 250µA	110nC @ 10V	4560pF @ 25V	10V	±30V
	IRFI4227PBF	RFQ VIEW	PDF RFQ	3,856 In-stock	Infineon Technologies	MOSFET N-CH 200V 26A TO-220FP		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak	46W (Tc)	N-Channel	-	200V	26A (Tc)	25 mOhm @ 17A, 10V	5V @ 250µA	110nC @ 10V	4600pF @ 25V	10V	±30V
	IRFI4321PBF	RFQ VIEW	PDF RFQ	3,288 In-stock	Infineon Technologies	MOSFET N-CH 150V 34A TO-220AB FP		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak	46W (Tc)	N-Channel	-	150V	34A (Tc)	16 mOhm @ 20A, 10V	5V @ 250µA	110nC @ 10V	4440pF @ 50V	10V	±30V
	IRFI4229PBF	RFQ VIEW	PDF RFQ	1,098 In-stock	Infineon Technologies	MOSFET N-CH 250V 19A TO-220FP		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	46W (Tc)	N-Channel	-	250V	19A (Tc)	46 mOhm @ 11A, 10V	5V @ 250µA	110nC @ 10V	4480pF @ 25V	10V	±30V

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