Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,508
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IXYS MOSFET N-CH 150V 42A ISPLUS220 PolarHT™ HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 120W (Tc) N-Channel 150V 42A (Tc) 26 mOhm @ 48A, 10V 5V @ 4mA 110nC @ 10V 3500pF @ 25V 10V ±20V
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691
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IXYS MOSFET N-CH 100V 60A ISOPLUS220 HiPerFET™, PolarHT™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 120W (Tc) N-Channel 100V 60A (Tc) 17 mOhm @ 55A, 10V 5V @ 4mA 110nC @ 10V 3550pF @ 25V 10V ±20V
R6035ENZC8
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3,082
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Rohm Semiconductor MOSFET N-CH 600V 35A TO3PF - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 120W (Tc) N-Channel 600V 35A (Tc) 102 mOhm @ 18.1A, 10V 4V @ 1mA 110nC @ 10V 2720pF @ 25V 10V ±20V
R6035ENZ1C9
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1,327
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Rohm Semiconductor MOSFET N-CH 600V 35A TO247 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 120W (Tc) N-Channel 600V 35A (Tc) 102 mOhm @ 18.1A, 10V 4V @ 1mA 110nC @ 10V 2720pF @ 25V 10V ±20V