Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFIZ48G
RFQ
VIEW
RFQ
1,802
In-stock
Vishay Siliconix MOSFET N-CH 60V 37A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 50W (Tc) N-Channel 60V 37A (Tc) 18 mOhm @ 22A, 10V 4V @ 250µA 110nC @ 10V 2400pF @ 25V 10V ±20V
TK39A60W,S4VX
RFQ
VIEW
RFQ
963
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 39A TO220-3 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110nC @ 10V 4100pF @ 300V 10V ±30V
FQPF32N20C
RFQ
VIEW
RFQ
1,046
In-stock
ON Semiconductor MOSFET N-CH 200V 28A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 50W (Tc) N-Channel 200V 28A (Tc) 82 mOhm @ 14A, 10V 4V @ 250µA 110nC @ 10V 2220pF @ 25V 10V ±30V
IRFIZ48GPBF
RFQ
VIEW
RFQ
1,661
In-stock
Vishay Siliconix MOSFET N-CH 60V 37A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 50W (Tc) N-Channel 60V 37A (Tc) 18 mOhm @ 22A, 10V 4V @ 250µA 110nC @ 10V 2400pF @ 25V 10V ±20V