Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQH70N10
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2,029
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ON Semiconductor MOSFET N-CH 100V 70A TO-247 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 214W (Tc) N-Channel - 100V 70A (Tc) 23 mOhm @ 35A, 10V 4V @ 250µA 110nC @ 10V 3300pF @ 25V 10V ±25V
R6035ENZ1C9
RFQ
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RFQ
1,327
In-stock
Rohm Semiconductor MOSFET N-CH 600V 35A TO247 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 120W (Tc) N-Channel - 600V 35A (Tc) 102 mOhm @ 18.1A, 10V 4V @ 1mA 110nC @ 10V 2720pF @ 25V 10V ±20V
TK39N60W,S1VF
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RFQ
2,488
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Toshiba Semiconductor and Storage MOSFET N CH 600V 38.8A TO247 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 270W (Tc) N-Channel Super Junction 600V 38.8A (Ta) 65 mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110nC @ 10V 4100pF @ 300V 10V ±30V
FDH3632
RFQ
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RFQ
1,227
In-stock
ON Semiconductor MOSFET N-CH 100V 80A TO-247 PowerTrench® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 310W (Tc) N-Channel - 100V 12A (Ta), 80A (Tc) 9 mOhm @ 80A, 10V 4V @ 250µA 110nC @ 10V 6000pF @ 25V 6V, 10V ±20V