Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,840
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Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A SC-97 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-97 4-TFP (9.2x9.2) 125W (Tc) N-Channel - 250V 20A (Ta) 105 mOhm @ 10A, 10V 3.5V @ 1mA 100nC @ 10V 4000pF @ 10V 10V ±20V
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2,416
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ON Semiconductor MOSFET N-CH 250V 34A TO-3PF UniFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole SC-94 TO-3PF 115W (Tc) N-Channel - 250V 34A (Tc) 41 mOhm @ 17A, 10V 5V @ 250µA 100nC @ 10V 4640pF @ 25V 10V ±30V
2SK2993(TE24L,Q)
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639
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Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A TO220SM - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220SM 100W (Tc) N-Channel - 250V 20A (Ta) 105 mOhm @ 10A, 10V 3.5V @ 1mA 100nC @ 10V 4000pF @ 10V 10V ±20V
IRFP254NPBF
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822
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Vishay Siliconix MOSFET N-CH 250V 23A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 220W (Tc) N-Channel - 250V 23A (Tc) 125 mOhm @ 14A, 10V 4V @ 250µA 100nC @ 10V 2040pF @ 25V 10V ±20V
FDA69N25
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2,676
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ON Semiconductor MOSFET N-CH 250V 69A TO-3P UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 480W (Tc) N-Channel - 250V 69A (Tc) 41 mOhm @ 34.5A, 10V 5V @ 250µA 100nC @ 10V 4640pF @ 25V 10V ±30V