Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PHP66NQ03LT,127
RFQ
VIEW
RFQ
3,200
In-stock
NXP USA Inc. MOSFET N-CH 25V 66A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 93W (Tc) N-Channel 25V 66A (Tc) 10.5 mOhm @ 25A, 10V 2V @ 1mA 12nC @ 5V 860pF @ 25V 5V, 10V ±20V
IRL520
RFQ
VIEW
RFQ
2,174
In-stock
Vishay Siliconix MOSFET N-CH 100V 9.2A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 60W (Tc) N-Channel 100V 9.2A (Tc) 270 mOhm @ 5.5A, 5V 2V @ 250µA 12nC @ 5V 490pF @ 25V 4V, 5V ±10V
IRL520PBF
RFQ
VIEW
RFQ
1,962
In-stock
Vishay Siliconix MOSFET N-CH 100V 9.2A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 60W (Tc) N-Channel 100V 9.2A (Tc) 270 mOhm @ 5.5A, 5V 2V @ 250µA 12nC @ 5V 490pF @ 25V 4V, 5V ±10V