Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPA65R380C6XKSA1
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3,950
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Infineon Technologies MOSFET N-CH 650V 10.6A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 31W (Tc) N-Channel - 650V 10.6A (Tc) 380 mOhm @ 3.2A, 10V 3.5V @ 320µA 39nC @ 10V 710pF @ 100V 10V ±20V
IPA65R380E6XKSA1
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RFQ
2,243
In-stock
Infineon Technologies MOSFET N-CH 650V 10.6A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO-220-FP 31W (Tc) N-Channel - 650V 10.6A (Tc) 380 mOhm @ 3.2A, 10V 3.5V @ 320µA 39nC @ 10V 710pF @ 100V 10V ±20V