Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB65R380C6ATMA1
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1,509
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Infineon Technologies MOSFET N-CH 650V 10.6A TO263 CoolMOS™ Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 83W (Tc) N-Channel - 650V 10.6A (Tc) 380 mOhm @ 3.2A, 10V 3.5V @ 320µA 39nC @ 10V 710pF @ 100V 10V ±20V
IXFA3N120TRL
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RFQ
3,647
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IXYS MOSFET N-CH 1200V 3A TO-263 HiPerFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 200W (Tc) N-Channel - 1200V 3A (Tc) 4.5 Ohm @ 1.5A, 10V 5V @ 1.5mA 39nC @ 10V 1050pF @ 25V 10V ±20V
STB12NM50T4
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RFQ
1,758
In-stock
STMicroelectronics MOSFET N-CH 550V 12A D2PAK MDmesh™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 160W (Tc) N-Channel - 550V 12A (Tc) 350 mOhm @ 6A, 10V 5V @ 50µA 39nC @ 10V 1000pF @ 25V 10V ±30V
IXFA4N100Q-TRL
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RFQ
3,045
In-stock
IXYS MOSFET N-CH 1000V 4A TO-263 HiPerFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (IXFA) 150W (Tc) N-Channel - 1000V 4A (Tc) 3 Ohm @ 2A, 10V 4.5V @ 1.5mA 39nC @ 10V 1050pF @ 25V 10V ±20V