Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AOT8N80L
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3,198
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 800V 7.4A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 245W (Tc) N-Channel - 800V 7.4A (Tc) 1.63 Ohm @ 4A, 10V 4.5V @ 250µA 32nC @ 10V 1650pF @ 25V 10V ±30V
STP15N80K5
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1,596
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STMicroelectronics MOSFET N CH 800V 14A TO-220 SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 190W (Tc) N-Channel - 800V 14A (Tc) 375 mOhm @ 7A, 10V 5V @ 100µA 32nC @ 10V 1100pF @ 100V 10V ±30V
TK17E80W,S1X
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2,174
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Toshiba Semiconductor and Storage MOSFET N-CHANNEL 800V 17A TO220 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C Through Hole TO-220-3 TO-220 180W (Tc) N-Channel - 800V 17A (Ta) 290 mOhm @ 8.5A, 10V 4V @ 850µA 32nC @ 10V 2050pF @ 300V 10V ±20V