Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SPP10N10L
RFQ
VIEW
RFQ
3,381
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A TO-220 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 50W (Tc) N-Channel - 100V 10.3A (Tc) 154 mOhm @ 8.1A, 10V 2V @ 21µA 22nC @ 10V 444pF @ 25V 4.5V, 10V ±20V
SPI10N10L
RFQ
VIEW
RFQ
1,238
In-stock
Infineon Technologies MOSFET N-CH 100V 10.3A I2PAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 50W (Tc) N-Channel - 100V 10.3A (Tc) 154 mOhm @ 8.1A, 10V 2V @ 21µA 22nC @ 10V 444pF @ 25V 4.5V, 10V ±20V
SPP04N50C3HKSA1
RFQ
VIEW
RFQ
2,019
In-stock
Infineon Technologies MOSFET N-CH 560V 4.5A TO-220AB CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 50W (Tc) N-Channel - 560V 4.5A (Tc) 950 mOhm @ 2.8A, 10V 3.9V @ 200µA 22nC @ 10V 470pF @ 25V 10V ±20V