- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,786
In-stock
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STMicroelectronics | MOSFET N-CH 620V 3.8A TO-220FP | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 620V | 3.8A (Tc) | 2 Ohm @ 1.9A, 10V | 4.5V @ 50µA | 22nC @ 10V | 550pF @ 50V | 10V | ±30V | |||
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VIEW |
2,210
In-stock
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STMicroelectronics | MOSFET N-CH 600V 7A TO-220FP | FDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 600V | 7A (Tc) | 700 mOhm @ 3.5A, 10V | 5V @ 250µA | 22nC @ 10V | 560pF @ 50V | 10V | ±30V | |||
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VIEW |
2,143
In-stock
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STMicroelectronics | MOSFET N-CH 650V 11A TO-220FP | MDmesh™ V | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 650V | 11A (Tc) | 340 mOhm @ 5.5A, 10V | 5V @ 250µA | 22nC @ 10V | 816pF @ 100V | 10V | ±25V | |||
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VIEW |
3,842
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 8A (Ta) | 540 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | 10V | ±30V |