Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQP2N50
RFQ
VIEW
RFQ
3,613
In-stock
ON Semiconductor MOSFET N-CH 500V 2.1A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 55W (Tc) N-Channel 500V 2.1A (Tc) 5.3 Ohm @ 1.05A, 10V 5V @ 250µA 8nC @ 10V 230pF @ 25V 10V ±30V
AOT3N50
RFQ
VIEW
RFQ
760
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 500V 3A TO-220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 74W (Tc) N-Channel 500V 3A (Tc) 3 Ohm @ 1.5A, 10V 4.5V @ 250µA 8nC @ 10V 331pF @ 25V 10V ±30V
STP6N60M2
RFQ
VIEW
RFQ
900
In-stock
STMicroelectronics MOSFET N-CH 600V TO-220 MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 60W (Tc) N-Channel 600V 4.5A (Tc) 1.2 Ohm @ 2.25A, 10V 4V @ 250µA 8nC @ 10V 232pF @ 100V 10V ±25V
FQP3P20
RFQ
VIEW
RFQ
2,634
In-stock
ON Semiconductor MOSFET P-CH 200V 2.8A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 52W (Tc) P-Channel 200V 2.8A (Tc) 2.7 Ohm @ 1.4A, 10V 5V @ 250µA 8nC @ 10V 250pF @ 25V 10V ±30V
AOT1N60
RFQ
VIEW
RFQ
633
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 1.3A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 41.7W (Tc) N-Channel 600V 1.3A (Tc) 9 Ohm @ 650mA, 10V 4.5V @ 250µA 8nC @ 10V 160pF @ 25V 10V ±30V