Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH28N60P3
RFQ
VIEW
RFQ
1,122
In-stock
IXYS MOSFET N-CH 600V 28A TO247 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 695W (Tc) N-Channel - 600V 28A (Tc) 260 mOhm @ 14A, 10V 5V @ 2.5mA 50nC @ 10V 3560pF @ 25V 10V ±30V
IXFH18N60P
RFQ
VIEW
RFQ
3,824
In-stock
IXYS MOSFET N-CH 600V 18A TO-247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 360W (Tc) N-Channel - 600V 18A (Tc) 400 mOhm @ 500mA, 10V 5.5V @ 2.5mA 50nC @ 10V 2500pF @ 25V 10V ±30V
IXTH22N50P
RFQ
VIEW
RFQ
966
In-stock
IXYS MOSFET N-CH 500V 22A TO-247 PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 350W (Tc) N-Channel - 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 250µA 50nC @ 10V 2630pF @ 25V 10V ±30V
IXTH10P50P
RFQ
VIEW
RFQ
2,326
In-stock
IXYS MOSFET P-CH 500V 10A TO-247 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel - 500V 10A (Tc) 1 Ohm @ 5A, 10V 4V @ 250µA 50nC @ 10V 2840pF @ 25V 10V ±20V
IXFH22N50P
RFQ
VIEW
RFQ
752
In-stock
IXYS MOSFET N-CH 500V 22A TO-247 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 350W (Tc) N-Channel - 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 2.5mA 50nC @ 10V 2630pF @ 25V 10V ±30V