Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFQ28N60P3
RFQ
VIEW
RFQ
2,525
In-stock
IXYS MOSFET N-CH 600V 28A TO3P HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 695W (Tc) N-Channel - 600V 28A (Tc) 260 mOhm @ 14A, 10V 5V @ 2.5mA 50nC @ 10V 3560pF @ 25V 10V ±30V
IXFQ60N25X3
RFQ
VIEW
RFQ
1,555
In-stock
IXYS MOSFET N-CHANNEL 250V 60A TO3P HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 320W (Tc) N-Channel - 250V 60A (Tc) 23 mOhm @ 30A, 10V 4.5V @ 1.5mA 50nC @ 10V 3610pF @ 25V 10V ±20V
IXTQ10P50P
RFQ
VIEW
RFQ
2,872
In-stock
IXYS MOSFET P-CH 500V 10A TO-3P PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 300W (Tc) P-Channel - 500V 10A (Tc) 1 Ohm @ 5A, 10V 4V @ 250µA 50nC @ 10V 2840pF @ 25V 10V ±20V
IXTQ22N50P
RFQ
VIEW
RFQ
899
In-stock
IXYS MOSFET N-CH 500V 22A TO-3P PolarHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 350W (Tc) N-Channel - 500V 22A (Tc) 270 mOhm @ 11A, 10V 5.5V @ 250µA 50nC @ 10V 2630pF @ 25V 10V ±30V