Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC028N06NSTATMA1
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3,591
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Infineon Technologies DIFFERENTIATED MOSFETS OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 3W (Ta), 100W (Tc) N-Channel - 60V 24A (Ta), 100A (Tc) 2.8 mOhm @ 50A, 10V 3.3V @ 50µA 49nC @ 10V 3375pF @ 30V 6V, 10V ±20V
BSC028N06NSTATMA1
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RFQ
2,649
In-stock
Infineon Technologies DIFFERENTIATED MOSFETS OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 3W (Ta), 100W (Tc) N-Channel - 60V 24A (Ta), 100A (Tc) 2.8 mOhm @ 50A, 10V 3.3V @ 50µA 49nC @ 10V 3375pF @ 30V 6V, 10V ±20V
BSC028N06NSTATMA1
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RFQ
3,838
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Infineon Technologies DIFFERENTIATED MOSFETS OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 3W (Ta), 100W (Tc) N-Channel - 60V 24A (Ta), 100A (Tc) 2.8 mOhm @ 50A, 10V 3.3V @ 50µA 49nC @ 10V 3375pF @ 30V 6V, 10V ±20V
TPH4R606NH,L1Q
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RFQ
2,840
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Toshiba Semiconductor and Storage MOSFET N CH 60V 32A 8-SOP ADV U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 63W (Tc) N-Channel - 60V 32A (Ta) 4.6 mOhm @ 16A, 10V 4V @ 500µA 49nC @ 10V 3965pF @ 30V 6.5V, 10V ±20V
TPH4R606NH,L1Q
RFQ
VIEW
RFQ
1,926
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Toshiba Semiconductor and Storage MOSFET N CH 60V 32A 8-SOP ADV U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 63W (Tc) N-Channel - 60V 32A (Ta) 4.6 mOhm @ 16A, 10V 4V @ 500µA 49nC @ 10V 3965pF @ 30V 6.5V, 10V ±20V
TPH4R606NH,L1Q
RFQ
VIEW
RFQ
2,516
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 32A 8-SOP ADV U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 63W (Tc) N-Channel - 60V 32A (Ta) 4.6 mOhm @ 16A, 10V 4V @ 500µA 49nC @ 10V 3965pF @ 30V 6.5V, 10V ±20V