Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPN2R203NC,L1Q
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.2 mOhm @ 22.5A, 10V 2.3V @ 500µA 34nC @ 10V 2230pF @ 15V 10V ±20V
TPN2R203NC,L1Q
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2,335
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.2 mOhm @ 22.5A, 10V 2.3V @ 500µA 34nC @ 10V 2230pF @ 15V 10V ±20V
TPN2R203NC,L1Q
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2,188
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON U-MOSVIII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 30V 45A (Tc) 2.2 mOhm @ 22.5A, 10V 2.3V @ 500µA 34nC @ 10V 2230pF @ 15V 10V ±20V