Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFU4105PBF
RFQ
VIEW
RFQ
1,039
In-stock
Infineon Technologies MOSFET N-CH 55V 27A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 68W (Tc) N-Channel - 55V 27A (Tc) 45 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
IRFZ34NL
RFQ
VIEW
RFQ
1,089
In-stock
Infineon Technologies MOSFET N-CH 55V 29A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 68W (Tc) N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
IRFU4105
RFQ
VIEW
RFQ
3,097
In-stock
Infineon Technologies MOSFET N-CH 55V 27A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 68W (Tc) N-Channel - 55V 27A (Tc) 45 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
IRFIZ34E
RFQ
VIEW
RFQ
2,896
In-stock
Infineon Technologies MOSFET N-CH 60V 21A TO220FP HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 37W (Tc) N-Channel - 60V 21A (Tc) 42 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
IRFZ34NPBF
RFQ
VIEW
RFQ
3,184
In-stock
Infineon Technologies MOSFET N-CH 55V 29A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 68W (Tc) N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
IRFZ34NLPBF
RFQ
VIEW
RFQ
2,882
In-stock
Infineon Technologies MOSFET N-CH 55V 29A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 68W (Tc) N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
AUIRFZ34N
RFQ
VIEW
RFQ
1,337
In-stock
Infineon Technologies MOSFET N-CH 55V 29A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 68W (Tc) N-Channel - 55V 29A (Tc) 40 mOhm @ 16A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V
IRFIZ34NPBF
RFQ
VIEW
RFQ
3,349
In-stock
Infineon Technologies MOSFET N-CH 55V 21A TO220FP HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 37W (Tc) N-Channel - 55V 21A (Tc) 40 mOhm @ 11A, 10V 4V @ 250µA 34nC @ 10V 700pF @ 25V 10V ±20V