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- Series :
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- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,097
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 3.6A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | 600V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
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VIEW |
2,299
In-stock
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Infineon Technologies | MOSFET N-CH 600V 16.8A 3TO263 | CoolMOS™ P6 | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 126W (Tc) | N-Channel | 600V | 16.8A (Tc) | 230 mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31nC @ 10V | 1450pF @ 100V | 10V | ±20V | |||
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3,789
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 3.6A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | 600V | 3.6A (Tc) | 2.2 Ohm @ 2.2A, 10V | 4V @ 250µA | 31nC @ 10V | 660pF @ 25V | 10V | ±20V | |||
