Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFU9014N
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941
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Infineon Technologies MOSFET P-CH 60V 5.1A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 2.5W (Ta), 25W (Tc) P-Channel 60V 5.1A (Tc) 500 mOhm @ 3.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V
IRFU9014
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3,644
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Vishay Siliconix MOSFET P-CH 60V 5.1A I-PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 25W (Tc) P-Channel 60V 5.1A (Tc) 500 mOhm @ 3.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V
IRFU9014PBF
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RFQ
2,573
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Vishay Siliconix MOSFET P-CH 60V 5.1A I-PAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 2.5W (Ta), 25W (Tc) P-Channel 60V 5.1A (Tc) 500 mOhm @ 3.1A, 10V 4V @ 250µA 12nC @ 10V 270pF @ 25V 10V ±20V