Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK15A50D(STA4,Q,M)
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RFQ
1,379
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 500V 15A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel - 500V 15A (Ta) 300 mOhm @ 7.5A, 10V 4V @ 1mA 40nC @ 10V 2300pF @ 25V 10V ±30V
AOTF10N60
RFQ
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RFQ
3,934
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 10A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 50W (Tc) N-Channel - 600V 10A (Tc) 750 mOhm @ 5A, 10V 4.5V @ 250µA 40nC @ 10V 1600pF @ 25V 10V ±30V
FQPF19N20
RFQ
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RFQ
2,208
In-stock
ON Semiconductor MOSFET N-CH 200V 11.8A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 50W (Tc) N-Channel - 200V 11.8A (Tc) 150 mOhm @ 5.9A, 10V 5V @ 250µA 40nC @ 10V 1600pF @ 25V 10V ±30V
TK14A55D(STA4,Q,M)
RFQ
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RFQ
2,469
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 550V 14A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel - 550V 14A (Ta) 370 mOhm @ 7A, 10V 4V @ 1mA 40nC @ 10V 2300pF @ 25V 10V ±30V
TK13A60D(STA4,Q,M)
RFQ
VIEW
RFQ
2,854
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 13A TO220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 50W (Tc) N-Channel - 600V 13A (Ta) 430 mOhm @ 6.5A, 10V 4V @ 1mA 40nC @ 10V 2300pF @ 25V 10V ±30V
IPD50N06S4L12ATMA2
RFQ
VIEW
RFQ
3,836
In-stock
Infineon Technologies MOSFET N-CH 60V 50A TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 50W (Tc) N-Channel - 60V 50A (Tc) 12 mOhm @ 50A, 10V 2.2V @ 20µA 40nC @ 10V 2890pF @ 25V 4.5V, 10V ±16V
IPD50N06S4L12ATMA2
RFQ
VIEW
RFQ
1,157
In-stock
Infineon Technologies MOSFET N-CH 60V 50A TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 50W (Tc) N-Channel - 60V 50A (Tc) 12 mOhm @ 50A, 10V 2.2V @ 20µA 40nC @ 10V 2890pF @ 25V 4.5V, 10V ±16V
IPD50N06S4L12ATMA2
RFQ
VIEW
RFQ
2,550
In-stock
Infineon Technologies MOSFET N-CH 60V 50A TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 50W (Tc) N-Channel - 60V 50A (Tc) 12 mOhm @ 50A, 10V 2.2V @ 20µA 40nC @ 10V 2890pF @ 25V 4.5V, 10V ±16V