Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHU7N60E-GE3
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3,106
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Vishay Siliconix MOSFET N-CH 600V 7A TO-251 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 78W (Tc) N-Channel - 600V 7A (Tc) 600 mOhm @ 3.5A, 10V 4V @ 250µA 40nC @ 10V 680pF @ 100V 10V ±30V
SIHP7N60E-GE3
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3,389
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Vishay Siliconix MOSFET N-CH 600V 7A TO-220AB - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 78W (Tc) N-Channel - 600V 7A (Tc) 600 mOhm @ 3.5A, 10V 4V @ 250µA 40nC @ 10V 680pF @ 100V 10V ±30V
R6020KNX
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913
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Rohm Semiconductor MOSFET N-CH 600V 20A TO220FM - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 68W (Tc) N-Channel Schottky Diode (Isolated) 600V 20A (Tc) 196 mOhm @ 9.5A, 10V 5V @ 1mA 40nC @ 10V 1550pF @ 25V 10V ±20V
SIHD7N60E-GE3
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2,890
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Vishay Siliconix MOSFET N-CH 600V 7A TO-252 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 78W (Tc) N-Channel - 600V 7A (Tc) 600 mOhm @ 3.5A, 10V 4V @ 250µA 40nC @ 10V 680pF @ 100V 10V ±30V