Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHP7N60E-E3
RFQ
VIEW
RFQ
993
In-stock
Vishay Siliconix MOSFET N-CH 600V 7A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 78W (Tc) N-Channel - 600V 7A (Tc) 600 mOhm @ 3.5A, 10V 4V @ 250µA 40nC @ 10V 680pF @ 100V 10V ±30V
IXFP10N80P
RFQ
VIEW
RFQ
1,689
In-stock
IXYS MOSFET N-CH 800V 10A TO-220 HiPerFET™, PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 800V 10A (Tc) 1.1 Ohm @ 5A, 10V 5.5V @ 2.5mA 40nC @ 10V 2050pF @ 25V 10V ±30V
SIHP7N60E-GE3
RFQ
VIEW
RFQ
3,389
In-stock
Vishay Siliconix MOSFET N-CH 600V 7A TO-220AB - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 78W (Tc) N-Channel - 600V 7A (Tc) 600 mOhm @ 3.5A, 10V 4V @ 250µA 40nC @ 10V 680pF @ 100V 10V ±30V
FQP6N90C
RFQ
VIEW
RFQ
1,091
In-stock
ON Semiconductor MOSFET N-CH 900V 6A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 167W (Tc) N-Channel - 900V 6A (Tc) 2.3 Ohm @ 3A, 10V 5V @ 250µA 40nC @ 10V 1770pF @ 25V 10V ±30V