Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDFS2P102
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1,272
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ON Semiconductor MOSFET P-CH 20V 3.3A 8-SOIC - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 900mW (Ta) P-Channel Schottky Diode (Isolated) 20V 3.3A (Ta) 125 mOhm @ 3.3A, 10V 2V @ 250µA 10nC @ 10V 270pF @ 10V 4.5V, 10V ±20V
FDZ193P
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RFQ
3,526
In-stock
ON Semiconductor MOSFET P-CH 20V 3A 8-WLCSP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA, WLCSP 6-WLCSP 1.9W (Ta) P-Channel - 20V 3A (Ta) 90 mOhm @ 1A, 4.5V 1.5V @ 250µA 10nC @ 10V 660pF @ 10V 1.7V, 4.5V ±12V
TSM2305CX RFG
RFQ
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RFQ
1,471
In-stock
Taiwan Semiconductor Corporation MOSFET P-CHANNEL 20V 3.2A SOT23 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 1.25W (Ta) P-Channel - 20V 3.2A (Ta) 55 mOhm @ 3.2A, 4.5V 1V @ 250µA 10nC @ 10V 990pF @ 10V 1.8V, 4.5V ±8V