Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STQ1HNK60R-AP
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1,875
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STMicroelectronics MOSFET N-CH 600V 400MA TO-92 SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 3W (Tc) N-Channel - 600V 400mA (Tc) 8.5 Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 156pF @ 25V 10V ±30V
STQ2NK60ZR-AP
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2,314
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STMicroelectronics MOSFET N-CH 600V 0.4A TO-92 SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 3W (Tc) N-Channel - 600V 400mA (Tc) 8 Ohm @ 700mA, 10V 4.5V @ 50µA 10nC @ 10V 170pF @ 25V 10V ±30V
SQ2325ES-T1_GE3
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1,682
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Vishay Siliconix MOSFET P-CH 150V 840MA TO236 Automotive, AEC-Q101, TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TA) Surface Mount TO-236-3, SC-59, SOT-23-3 TO-236 (SOT-23) 3W (Tc) P-Channel - 150V 840mA (Tc) 1.77 Ohm @ 500mA, 10V 3.5V @ 250µA 10nC @ 10V 250pF @ 50V 10V ±20V