Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFH8337TR2PBF
RFQ
VIEW
RFQ
3,817
In-stock
Infineon Technologies MOSFET N-CH 30V 9.7A 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.2W (Ta), 27W (Tc) N-Channel 30V 12A (Ta), 35A (Tc) 12.8 mOhm @ 16.2A, 10V 2.35V @ 25µA 10nC @ 10V 790pF @ 10V 4.5V, 10V ±20V
IRFH8337TRPBF
RFQ
VIEW
RFQ
3,147
In-stock
Infineon Technologies MOSFET N-CH 30V 12A 5X6 PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 3.2W (Ta), 27W (Tc) N-Channel 30V 12A (Ta), 35A (Tc) 12.8 mOhm @ 16.2A, 10V 2.35V @ 25µA 10nC @ 10V 790pF @ 10V 4.5V, 10V ±20V
BSZ065N03LSATMA1
RFQ
VIEW
RFQ
963
In-stock
Infineon Technologies MOSFET N-CH 30V 12A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 26W (Tc) N-Channel 30V 12A (Ta), 40A (Tc) 6.5 mOhm @ 20A, 10V 2V @ 250µA 10nC @ 10V 670pF @ 15V 4.5V, 10V ±20V
BSZ165N04NSGATMA1
RFQ
VIEW
RFQ
2,182
In-stock
Infineon Technologies MOSFET N-CH 40V 31A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 25W (Tc) N-Channel 40V 8.9A (Ta), 31A (Tc) 16.5 mOhm @ 20A, 10V 4V @ 10µA 10nC @ 10V 840pF @ 20V 10V ±20V
RS1E150GNTB
RFQ
VIEW
RFQ
695
In-stock
Rohm Semiconductor MOSFET N-CH 30V 15A 8-HSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 22.9W (Tc) N-Channel 30V 15A (Ta) 8.8 mOhm @ 15A, 10V 2.5V @ 1mA 10nC @ 10V 590pF @ 15V 4.5V, 10V ±20V