- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
924
In-stock
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Diodes Incorporated | MOSFET N-CH 40V 5.4A 8SO | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1.56W (Ta) | N-Channel | 40V | 5.4A (Ta) | 34 mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 10V | 453pF @ 20V | 4.5V, 10V | ±20V | ||||
VIEW |
1,909
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 40V 3.9A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | N-Channel | 40V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 3V @ 250µA | 10nC @ 10V | 540pF @ 20V | 4.5V, 10V | ±20V | ||||
VIEW |
1,442
In-stock
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ON Semiconductor | T6 40V MOSFET | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 3.8W (Ta), 106W (Tc) | N-Channel | 40V | 35A (Ta), 185A (Tc) | 1.7 mOhm @ 50A, 10V | 3.5V @ 250µA | 10nC @ 10V | 3300pF @ 25V | 10V | ±20V | ||||
VIEW |
2,182
In-stock
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Infineon Technologies | MOSFET N-CH 40V 31A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8 | 2.1W (Ta), 25W (Tc) | N-Channel | 40V | 8.9A (Ta), 31A (Tc) | 16.5 mOhm @ 20A, 10V | 4V @ 10µA | 10nC @ 10V | 840pF @ 20V | 10V | ±20V | ||||
VIEW |
3,130
In-stock
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Nexperia USA Inc. | MOSFET N-CH 40V 33A LFPAK | TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 | 45W (Tc) | N-Channel | 40V | 33A (Tc) | 21 mOhm @ 10A, 10V | 4V @ 1mA | 10nC @ 10V | 617pF @ 25V | 10V | ±20V | ||||
VIEW |
3,642
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 15A DPAK | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 46W (Tc) | N-Channel | 40V | 15A (Ta) | 17.8 mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10nC @ 10V | 610pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,494
In-stock
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Diodes Incorporated | MOSFET N-CH 40V 5.4A 8SO | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.56W (Ta) | N-Channel | 40V | 5.4A (Ta) | 34 mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 10V | 453pF @ 20V | 4.5V, 10V | ±20V |