Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFU120Z
RFQ
VIEW
RFQ
2,695
In-stock
Infineon Technologies MOSFET N-CH 100V 8.7A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 35W (Tc) N-Channel 100V 8.7A (Tc) 190 mOhm @ 5.2A, 10V 4V @ 250µA 10nC @ 10V 310pF @ 25V 10V ±20V
IRFU120ZPBF
RFQ
VIEW
RFQ
1,898
In-stock
Infineon Technologies MOSFET N-CH 100V 8.7A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 35W (Tc) N-Channel 100V 8.7A (Tc) 190 mOhm @ 5.2A, 10V 4V @ 250µA 10nC @ 10V 310pF @ 25V 10V ±20V
AOTF3N80
RFQ
VIEW
RFQ
3,584
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 800V 2.8A TO220F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 35W (Tc) N-Channel 800V 2.8A (Tc) 4.8 Ohm @ 1.5A, 10V 4.5V @ 250µA 10nC @ 10V 510pF @ 25V 10V ±30V