Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK15A60U(STA4,Q,M)
RFQ
VIEW
RFQ
1,058
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 600V 15A TO-220SIS DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel 600V 15A (Ta) 300 mOhm @ 7.5A, 10V 5V @ 1mA 17nC @ 10V 950pF @ 10V 10V ±30V
2SK3564(STA4,Q,M)
RFQ
VIEW
RFQ
967
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 900V 3A TO-220SIS π-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel 900V 3A (Ta) 4.3 Ohm @ 1.5A, 10V 4V @ 1mA 17nC @ 10V 700pF @ 25V 10V ±30V
IRFZ20
RFQ
VIEW
RFQ
3,345
In-stock
Vishay Siliconix MOSFET N-CH 50V 15A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 40W (Tc) N-Channel 50V 15A (Tc) 100 mOhm @ 10A, 10V 4V @ 250µA 17nC @ 10V 850pF @ 25V 10V ±20V
TK13A65U(STA4,Q,M)
RFQ
VIEW
RFQ
1,166
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 650V 13A TO-220SIS DTMOSII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 40W (Tc) N-Channel 650V 13A (Ta) 380 mOhm @ 6.5A, 10V 5V @ 1mA 17nC @ 10V 950pF @ 10V 10V ±30V
IRFZ20PBF
RFQ
VIEW
RFQ
2,132
In-stock
Vishay Siliconix MOSFET N-CH 50V 15A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 40W (Tc) N-Channel 50V 15A (Tc) 100 mOhm @ 10A, 10V 4V @ 250µA 17nC @ 10V 850pF @ 25V 10V ±20V