- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
12 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,360
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 6A VS6 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 20V | 6A (Ta) | 20 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 9nC @ 5V | 630pF @ 10V | 2.5V, 4.5V | ±12V | ||||
VIEW |
3,527
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 5A VS-6 | U-MOSIII-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 30V | 5A (Ta) | 59 mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3nC @ 10V | 490pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,464
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.7A VS-8 | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,074
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A VS8 2-3U1A | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | - | 20V | 6A (Ta) | 30 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 19nC @ 5V | 1550pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,512
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 12V 6A SOP-8 ADV | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 20W (Tc) | P-Channel | - | 12V | 6A (Ta) | 33 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 18nC @ 5V | 1600pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
3,108
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 10A SOP8 2-6J1B | U-MOSIV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | P-Channel | - | 20V | 10A (Ta) | 10 mOhm @ 5A, 4.5V | 1.2V @ 200µA | 115nC @ 5V | 9130pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,838
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.5A VS6 2-3T1A | U-MOSIV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 4.5A (Ta) | 55 mOhm @ 2.2A, 4.5V | 1.2V @ 200µA | 9.8nC @ 5V | 680pF @ 10V | 2V, 4.5V | ±12V | ||||
VIEW |
1,098
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.5A VS6 2-3T1A | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 5.5A (Ta) | 40 mOhm @ 2.8A, 4.5V | 1.2V @ 200µA | 19nC @ 5V | 1430pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,139
In-stock
|
Toshiba Semiconductor and Storage | X34 PB-F UF6 S-MOS (LF) TRANSIST | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | P-Channel | - | 20V | 2.5A (Ta) | 64 mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | - | 800pF @ 10V | 2V, 4.5V | ±10V | ||||
VIEW |
2,409
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A VS6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 5A (Ta) | 55 mOhm @ 2.5A, 4.5V | 1.2V @ 200µA | 10nC @ 5V | 690pF @ 10V | 2.5V, 4.5V | ±12V | ||||
VIEW |
1,515
In-stock
|
Diodes Incorporated | MOSFET P-CH 20V 9.2A 6-DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerUDFN | U-DFN2523-6 | 1W (Ta) | P-Channel | - | 20V | 9.2A (Ta) | 16 mOhm @ 3.6A, 4.5V | 1.2V @ 200µA | 113nC @ 10V | 4748pF @ 10V | 1.5V, 4.5V | ±12V | ||||
VIEW |
3,852
In-stock
|
Infineon Technologies | MOSFET N-CH 20V 100A TDSON-8 | OptiMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.8W (Ta), 78W (Tc) | N-Channel | - | 20V | 25A (Ta), 100A (Tc) | 2.6 mOhm @ 50A, 4.5V | 1.2V @ 200µA | 52.7nC @ 4.5V | 7800pF @ 10V | 2.5V, 4.5V | ±12V |