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- Operating Temperature :
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- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,031
In-stock
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Microchip Technology | MOSFET P-CH 40V 430MA TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 740mW (Ta) | P-Channel | - | 40V | 430mA (Tj) | 2 Ohm @ 1A, 10V | 2.4V @ 1mA | - | 150pF @ 20V | 5V, 10V | ±20V | |||
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991
In-stock
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Microchip Technology | MOSFET N-CH 40V 350MA TO92-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 1W (Tc) | N-Channel | - | 40V | 350mA (Tj) | 3 Ohm @ 1A, 10V | 2.4V @ 1mA | - | 65pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
3,578
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8SOP | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.85 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V | |||
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667
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8SOP | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.85 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
3,811
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8SOP | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.85 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
1,105
In-stock
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Microchip Technology | MOSFET N-CH 40V 350MA TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | - | 40V | 350mA (Tj) | 3 Ohm @ 1A, 10V | 2.4V @ 1mA | - | 65pF @ 25V | 5V, 10V | ±20V | |||
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VIEW |
3,764
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8DSOP | U-MOSIX-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.8 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
1,177
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8DSOP | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.8 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
1,845
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 150A 8DSOP | U-MOSIX-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DSOP Advance | 1W (Ta), 170W (Tc) | N-Channel | - | 40V | 150A (Tc) | 0.8 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | 4.5V, 10V | ±20V | |||
